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PP2185 Insulated gate bipolar transistor IGBT W4DC105PM 840 C RJ139 Compact construction: The compact structure
PP2185 Insulated gate bipolar transistor IGBT W4DC105PM 840 C RJ139 Compact construction: The compact structure
PP2185 Insulated gate bipolar transistor IGBT W4DC105PM 840 C RJ139 Compact construction: The compact structure
PP2185 Insulated gate bipolar transistor IGBT W4DC105PM 840 C RJ139 Compact construction: The compact structure
EUR36.09 EUR67.09

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PP2185 Insulated gate bipolar transistor IGBT W4DC105PM 840 C RJ139 Compact construction: The compact structure

SKU 28735653435
4.9
Description

Compact construction: The compact structure enables easy integration into different devices and systems

Order now and improve your industrial applications with this first -class sensor

Compatibility: Developed for a variety of printing machines

Siemens Qualität: Hergestellt von Siemens

Benefit from the new

PP2185 Insulated gate bipolar transistor IGBT W4DC105PM 840 C RJ139 Compact construction: The compact structureSie bieten auf einen benutzten IGBT aus einer Industriemaschinen Demontage. Artikel war bis zum Ausbau in Betrieb.

Exchange/Return Notes
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  • Final sale items are not eligible for returns or exchanges.
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