LK2959 Insulated gate bipolar transistor IGBT Fuji 6MBP150RA120 150A 1200V CAT1163184 Easy handling: The intuitive construction

Easy handling: The intuitive construction enables problem -free assembly and maintenance

Sealed construction: The robust and sealed construction ensures high resistance to dust and moisture

Modellnummer: 6ES5 095-8MD01 - Ein bewährtes Standardmodell in der Siemens Simatic S5-Serie

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LK2959 Insulated gate bipolar transistor IGBT Fuji 6MBP150RA120 150A 1200V CAT1163184 Easy handling: The intuitive constructionDiscover the LK2959 Insulated Gate Bipolar Transistor (IGBT) by Fuji, a reliable component from a device dismantling. This IGBT, the 6MBP150RA120 model, offers an impressive performance with 150a and 1200V, ideal for demanding industrial applications. It was in operation until he was expanded and guarantees high efficiency and durability. High current: With a nominal output of 150a, this IGBT is ideal for high performance applications. High voltage